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VBT6045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 30A TO263AB. Review the specifications below when checking this part for your BOM.
The VBT6045C-E3/8W is a dual low-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a common cathode configuration in a D2PAK (TO-263AB) package. The device provides a maximum repetitive peak reverse voltage of 45 V and a total maximum average forward rectified current of 60 A, with 30 A per diode. Peak forward surge current capability is rated at 320 A for an 8.3 ms single half-sine-wave pulse. The component operates within a junction and storage temperature range of -40 to +150 °C.
Verify the specific ordering suffix /8W corresponds to tape and reel packaging containing 800 units per reel, distinct from the tube packaging associated with other variants. Confirm RoHS compliance and material categorization details via the official Vishay documentation before finalizing procurement specifications.
Select this component for designs requiring low forward voltage characteristics to minimize conduction losses. Ensure thermal management strategies account for the specified thermal resistance values. Validate that the 45 V reverse voltage rating exceeds the maximum circuit operating voltage under all transient conditions.
This part belongs to the VBT6045C series of dual low-voltage TMBS rectifiers. The E3 suffix indicates lead-free terminals that are matte tin plated and solderable per J-STD-002 and JESD 22-B102 standards. The base product utilizes commercial grade materials compliant with UL 94 V-0 flammability ratings for the molding compound.
Public confirmed substitute part numbers are not available in the provided datasheet.
The typical instantaneous forward voltage is 0.44 V at an forward current of 10 A and a case temperature of 25 °C.
At a forward current of 10 A and a case temperature of 125 °C, the typical instantaneous forward voltage decreases to 0.33 V.
The maximum reverse current per diode is 50 mA when tested at a reverse voltage of 45 V and a temperature of 125 °C.
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