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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 3A SOT28
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Rds On (Max) @ Id, Vgs：80mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：505pF @ 20V
- Power - Max：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：SOT-28FL/VEC8
- Grade：-
- Qualification：-
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Overview
The VEC2415-TL-W-Z is a dual N-channel MOSFET from onsemi, housed in an SOT-28 package. It features a 60V drain-source voltage rating and a continuous drain current of 3A. The device utilizes Metal Oxide semiconductor technology and is configured as a dual independent channel array. This component is designed for general-purpose switching applications requiring robust reliability and scalable performance within compact form factors.
Feature Summary
- Dual N-channel configuration for independent switching control
- Compact SOT-28 surface-mount packaging
- Robust reliability suitable for mission-critical power systems
Applications
- Industrial automation power management
- Server power supply circuits
- Compute server load switching
Procurement Notes
Verify the specific suffix 'Z' against the manufacturer's official documentation to confirm compliance with RoHS directives and lead-free status. Confirm that the part number matches the exact electrical specifications required for your design, as minor variations in suffixes can indicate different tape-and-reel quantities or material compositions. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards.
Selection Notes
Select this component when a dual N-channel MOSFET with a 60V rating and 3A current capacity is required in a small footprint. Ensure the application operates within the specified temperature range and that the gate drive voltage is compatible with the device's threshold characteristics. Verify thermal dissipation requirements for the SOT-28 package under expected load conditions.
Part Context
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET category. It supports the company's focus on intelligent power technologies for industrial and data center applications. The SOT-28 package allows for high-density PCB layouts, making it suitable for space-constrained designs in modern electronic equipment.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult onsemi's official replacement guide or distributor databases for equivalent dual N-channel MOSFETs with matching voltage, current, and package specifications.
