VI40150CHM3/4W

Diode Arrays Overview

VI40150CHM3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a common cathode configuration with two independent diodes housed in a TO-262AA surface-mount package. The device supports a maximum repetitive peak reverse voltage of 150 V and provides a total maximum average forward rectified current of 40 A, rated at 20 A per diode. Key electrical characteristics include a peak forward surge current capability of 160 A and a typical thermal resistance of 1.8 °C/W per diode. The component operates within a junction temperature range of -55 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses for high efficiency operation.
• Features a common cathode dual-diode architecture designed for applications requiring freewheeling, OR-ing, or reverse battery protection.
• Complies with halogen-free and RoHS standards, meeting JESD 201 class 1A whisker test requirements.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific suffix 'HM3' against official documentation to confirm compliance details, as ordering suffixes may indicate variations in packaging or material composition. Ensure the TO-262AA package type matches the target PCB footprint. Confirm that the component meets the required environmental standards for the intended application environment before finalizing procurement.

Diode Arrays Selection Notes

Select this component when designing circuits requiring a 150 V rating with a combined 40 A current capacity in a compact surface-mount form factor. The TMBS technology offers superior performance compared to standard silicon rectifiers, particularly regarding switching speed and forward voltage reduction at elevated temperatures. Consider the thermal resistance specifications for heatsinking requirements in high-load scenarios.

Diode Arrays Part Context

The VI40150CHM3/4W belongs to the V40150C family of dual high-voltage Trench MOS Barrier Schottky rectifiers from Vishay. This series includes variants such as the V40150C (TO-220AB) and VB40150C (TO-263AB), offering flexibility in package selection based on thermal and mechanical constraints. All variants share identical electrical characteristics and are designed for high-efficiency power conversion applications.

Diode Arrays Replacement Considerations

Direct replacements within the same electrical specification and package include the V40150C-M3/4W (TO-220AB) and VB40150C-M3/I (TO-263AB). Verify pinout compatibility and thermal management requirements when substituting between different package types within the V40150C family.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for the VI40150CHM3/4W?

The maximum repetitive peak reverse voltage (VRRM) is 150 V.

How is the forward current distributed in this dual diode configuration?

The device has a total maximum average forward rectified current of 40 A, which is distributed as 20 A per diode.

What is the typical thermal resistance per diode for this component?

The typical thermal resistance (RθJC) is 1.8 °C/W per diode.