Diode Arrays VI40M120C-M3/4W product image

VI40M120C-M3/4W

$0.80
  • Description:DIODE ARR SCHOT 120V 20A TO262AA
  • Series:TMBS®

SKU:1e348b581ca4 Category: Brand:

  
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VI40M120C-M3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 120V 20A TO262AA. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VI40M120C-M3/4W

  • Description:DIODE ARR SCHOT 120V 20A TO262AA
  • Series:TMBS®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):120 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:890 mV @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:500 µA @ 120 V
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package:TO-262AA
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for VI40M120C-M3/4W

VI40M120C-M3/4W

Diode Arrays Overview

The VI40M120C-M3/4W is a dual high-voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration within a TO-262AA package, delivering a maximum average forward rectified current of 40 A (20 A per diode) and a repetitive peak reverse voltage of 120 V. The device supports a peak forward surge current of 250 A and operates across a junction temperature range from -40 °C to +175 °C. Electrical characteristics include an instantaneous forward voltage of 0.64 V at 20 A and a typical thermal resistance of 0.85 °C/W per device.

Diode Arrays Feature Summary

  • Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
  • Designed for high efficiency operation in switching applications
  • Features matte tin plated leads that are solderable per J-STD-002 standards
  • Compliant with RoHS directives and halogen-free material categorization

Diode Arrays Applications

  • High frequency DC/DC converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W corresponds to the tube delivery mode containing 50 units per tube as documented in the Vishay datasheet. Confirm the package type matches the TO-262AA form factor required for your PCB layout. Ensure compliance with the M3 suffix requirements regarding the JESD 201 class 1A whisker test if applicable to your supply chain standards.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for high-frequency power conversion. The TO-262AA package offers a thermal resistance of 55 °C/W junction-to-ambient, suitable for applications requiring efficient heat dissipation without extensive external heatsinking. Consider the 120 V rating and 40 A total current capacity against your circuit's peak load and voltage stress requirements.

Diode Arrays Part Context

This part belongs to the V40M120C and VI40M120C family of dual high-voltage Trench MOS Barrier Schottky Rectifiers. The VI prefix specifically denotes the TO-262AA surface-mount package variant, distinguishing it from the through-hole TO-220AB version. Both variants share identical electrical ratings and performance characteristics defined by the TMBS technology.

Diode Arrays Replacement Considerations

The V40M120C-M3/4W serves as the through-hole equivalent within the same product family. Direct substitution requires verifying pinout compatibility between the TO-262AA and TO-220AB packages.

VI40M120C-M3/4WVI40M120C-M3/4W
$0.80
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