VIT2080C-E3/4W

Diode Arrays Overview

The VIT2080C-E3/4W is a dual Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with two diodes housed in an isolated TO-262AA package. The device supports a maximum repetitive peak reverse voltage of 80 V and provides a maximum average forward rectified current of 10 A per diode. Key electrical characteristics include a typical instantaneous forward voltage of 0.57 V at 5 A and a peak forward surge current rating of 100 A. The component operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• Features an isolated base design suitable for heatsink mounting without external insulators
• Provides high efficiency operation ideal for high-frequency applications

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• DC/DC converters
• Reverse battery protection circuits

Diode Arrays Procurement Notes

Verify the specific package variant, as the VIT2080C designation corresponds to the TO-262AA form factor. Confirm RoHS compliance via the E3 suffix and ensure thermal management aligns with the specified junction temperature limits. Cross-reference datasheet document number 89166 for accurate mechanical dimensions and pinout definitions before integration.

Diode Arrays Selection Notes

Select this component when an isolated through-hole or surface-mount compatible package is required for dual-channel rectification. The TO-262AA case allows direct mounting to a heatsink while maintaining electrical isolation from the terminals. Consider the 80 V rating and 10 A per diode capacity against circuit load requirements and derating curves for ambient temperature conditions.

Diode Arrays Part Context

This part belongs to the V(B,I)T2080C family of dual TMBS rectifiers. Variants include VT2080C (TO-220AB), VFT2080C (ITO-220AB), and VBT2080C (D2PAK). All share identical electrical specifications but differ in physical packaging and thermal resistance characteristics. The VIT2080C specifically utilizes the TO-262AA outline.

Diode Arrays Replacement Considerations

Direct substitutes within the same electrical specification and package include VT2080C-E3/4W, VFT2080C-E3/4W, and VBT2080C-E3/4W. Ensure the replacement maintains the isolated base requirement if using a heatsink. Verify that any alternative dual Schottky rectifier matches the 80 V reverse voltage and 10 A current ratings.

Diode Arrays FAQ

Is the VIT2080C-E3/4W electrically isolated from the heatsink?

Yes, the TO-262AA package provides isolation between the terminals and the base, allowing direct mounting to a heatsink.

What is the maximum repetitive peak reverse voltage for this device?

The maximum repetitive peak reverse voltage (VRRM) is rated at 80 V.

Does the VIT2080C support avalanche energy handling?

Yes, the datasheet specifies a non-repetitive avalanche energy rating of 110 mJ per diode at TJ = 25 °C with L = 60 mH.