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The VMM45-02F is a high-voltage power MOSFET module manufactured by IXYS. It features an N-channel enhancement mode configuration housed in a robust TO-247 package. Key electrical parameters include a drain-source breakdown voltage of 450V and a continuous drain current rating of 45A. The device exhibits a maximum on-resistance of 0.02 ohms, ensuring efficient conduction with minimal power loss. It operates within a temperature range from -55°C to +175°C and supports a power dissipation capacity of 360W under specified conditions.
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with your circuit requirements. Confirm RoHS compliance status and packaging details directly with authorized distributors. Cross-reference pinouts and thermal characteristics with your PCB layout specifications before finalizing procurement orders.
Select this component when designing circuits requiring high voltage handling and significant current capacity in a standard through-hole package. Consider its thermal resistance and power dissipation limits relative to your heat sinking strategy. Ensure gate drive voltages remain within safe operating areas to prevent damage during switching transitions.
This part belongs to the VMM series of discrete power modules from IXYS, designed for general-purpose high-power switching. The series emphasizes ruggedness and ease of integration into industrial and consumer power electronics. It complements other high-voltage MOSFET offerings by providing a balance between performance and mechanical simplicity.
Consult official substitution guides for equivalent parts with matching voltage, current, and package dimensions. Verify that any alternative device meets or exceeds the original on-resistance and thermal performance specifications.