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Product Detailed Parameters
- Description：IGBT MODULE 600V 121A 462W MTP
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：2.29V @ 15V, 60A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：16-MTP Module
- Supplier Device Package：MTP
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：121 A
- Power - Max：462 W
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：9.5 nF @ 30 V
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Overview
The VS-100MT060WDF is a Vishay MTP IGBT power module integrating a warp 2 IGBT and FRED Pt hyperfast diodes. It features an isolated baseplate, integrated thermistor, and PCB solderable terminals for direct heatsink mounting. The IGBT offers a 600 V collector-emitter voltage with a maximum continuous collector current of 83 A at 80 °C case temperature. The antiparallel diode supports 11 A DC forward current at 80 °C, while the chopper diode handles 17 A DC. The module operates up to a junction temperature of 150 °C and includes low stray inductance design for high-speed switching.
Feature Summary
- Integrated thermistor for precise thermal monitoring
- Isolated baseplate enabling direct mounting to heatsinks
- Low stray inductance architecture optimized for high-speed operation
- PCB solderable terminals facilitating surface mount integration
Applications
- Buck Power Factor Correction (PFC) stages
- Industrial welding equipment
- Uninterruptible Power Supply (UPS) systems
- Switched Mode Power Supplies (SMPS)
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm RoHS compliance status and check for specific ordering suffixes that may alter electrical characteristics or packaging. Ensure the supplier provides valid traceability records and original manufacturer data sheets prior to purchase.
Selection Notes
Select this module for applications requiring high-frequency switching up to 150 kHz. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Verify that the gate drive circuitry supports the recommended 15 V gate-emitter voltage and accounts for the total gate charge specifications to ensure optimal switching performance.
Part Context
This component belongs to the MTP series of primary IGBT power modules from Vishay Semiconductors. It combines warp 2 IGBT technology with FRED Pt hyperfast diodes to minimize conduction and switching losses. The package utilizes an isolated baseplate design suitable for industrial-level qualification and robust thermal dissipation.
Replacement Considerations
Consult official Vishay substitution guides for compatible alternatives. Verify pinout compatibility and thermal resistance parameters when considering cross-brand replacements. Ensure replacement modules meet the same voltage and current ratings for safe system integration.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
Does the module include thermal protection components?
Yes, the module features an integrated thermistor for thermal monitoring.
What is the isolation voltage rating?
The isolation voltage is rated at 3500 VRMS for 1 second at 25 °C.
