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VS-12CWQ04FNTR-M3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY SCHOTTKY 40V 6A DPAK. Review the specifications below when checking this part for your BOM.
The VS-12CWQ04FNTR-M3 is a high-performance Schottky rectifier featuring a dual common cathode configuration in a DPAK (TO-252AA) surface-mount package. It provides a maximum average forward current of 6 A per leg and a repetitive peak reverse voltage rating of 40 V. The device exhibits a low forward voltage drop of 0.48 V at 6 A and 125 °C, with a maximum junction temperature range from -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging orientation and quantity. The 'TR' suffix indicates tape and reel packaging. Confirm RoHS compliance and halogen-free status as specified by the '-M3' designation before finalizing procurement orders.
Select this component when a low forward voltage drop and high-frequency operation are required in a compact surface-mount form factor. Ensure the application voltage does not exceed the 40 V rating and that thermal management accommodates the specified junction temperature limits under expected load conditions.
This part belongs to Vishay's 12CWQ series of high-performance Schottky rectifiers. The 'W' identifier denotes the DPAK package style, while 'Q' signifies the Schottky technology variant. The 'FN' code specifies the TO-252AA outline, distinguishing it from other package options within the broader product family.
Direct substitutes include the VS-12CWQ04FNHM3 for automotive-grade applications requiring AEC-Q101 qualification. Verify pinout compatibility and thermal resistance characteristics when replacing with non-Vishay equivalents.
The typical junction capacitance per leg is 405 pF, measured at VR = 5 VDC with a test signal range of 100 kHz to 1 MHz at 25 °C.
Yes, the device has a non-repetitive avalanche energy rating of 9 mJ per leg at TJ = 25 °C, IAS = 1.5 A, and L = 8 mH.
The maximum thermal resistance from junction to case is 3.0 °C/W per leg and 1.5 °C/W per device under DC operation conditions.
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