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VS-15CTQ035STRL-M3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 35V 7.5A TO263AB. Review the specifications below when checking this part for your BOM.
The VS-15CTQ035STRL-M3 is a high-performance Schottky rectifier from Vishay Semiconductors, featuring a center tap configuration with two anodes and a common cathode. It operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum average forward current of 15 A (7.5 A per leg) and supports a maximum repetitive peak reverse voltage of 35 V. Key electrical characteristics include a typical forward voltage drop of 0.51 V at 7.5 A and 125 °C, and a maximum non-repetitive surge current of 810 A for a 5 μs sine pulse.
Verify the specific ordering suffix against official documentation to confirm packaging orientation and quantity. The 'TRL' suffix indicates left-oriented tape and reel packaging for the D2PAK case style. Confirm compliance requirements such as RoHS and halogen-free status directly through manufacturer datasheets or authorized distributors before procurement.
Select this component when a dual-anode common-cathode topology is required for center-tapped applications. Ensure the circuit design accommodates the 35 V reverse voltage rating and the 15 A total average forward current limit. Consider the thermal management requirements based on the specified junction-to-case thermal resistance values for the intended operating environment.
This part belongs to the VS-15CTQ...S-M3 series of high-performance Schottky rectifiers manufactured by Vishay Semiconductors. The series utilizes proprietary barrier technology to achieve low forward voltage drops while maintaining high reliability. The D2PAK (TO-263AB) package allows for surface mount installation with direct heatsinking capabilities via the exposed thermal pad.
VS-15CTQ035S-M3
The maximum non-repetitive surge current is 810 A for a 5 μs sine pulse or 145 A for a 10 ms sine pulse.
The device features a center tap configuration with two anodes and a common cathode.
The maximum junction temperature is 150 °C.
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