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VS-16TTS08FP-M3 is listed in the Scrs range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is SCR 800V 16A TO220AB FP. Review the specifications below when checking this part for your BOM.
The VS-16TTS08FP-M3 is a high voltage phase control thyristor from Vishay Semiconductors, rated for an average on-state current of 10 A and a maximum peak reverse voltage of 800 V. It utilizes a fully isolated 3L TO-220 FullPAK package with a verified insulation voltage of 2500 VRMS. The device supports a maximum junction temperature of 125 °C and features a typical on-state voltage drop of 1.4 V at 10 A. Triggering requires a maximum DC gate current of 60 mA at 25 °C, while non-repetitive surge current capability reaches 200 A.
Verify the specific part number suffix against official documentation to confirm compliance with RoHS standards and lead-free termination requirements. Ensure that the selected component meets the required thermal management specifications for the intended application environment. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing procurement decisions.
Select this component based on its 800 V blocking capability and 10 A continuous current rating. Consider the fully isolated package when electrical isolation between the gate circuit and the main power path is mandatory. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation within the specified 125 °C junction temperature limit during operation.
This device belongs to the VS-16TTS..FP... series of silicon controlled rectifiers designed by Vishay Semiconductors. The series is engineered for medium power switching and phase control applications. The FP designation indicates the use of the 3L TO-220 FullPAK package, which provides robust mechanical mounting and enhanced electrical isolation compared to standard configurations.
VS-16TTS12FP-M3
The device features a fully isolated package with a maximum insulation voltage (VINS) of 2500 VRMS.
The maximum dV/dt rating is 500 V/μs when measured at the maximum junction temperature with the gate open.
The maximum required DC gate current decreases as temperature increases, ranging from 90 mA at -10 °C to 35 mA at 125 °C.
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