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The VS-3C01EJ12-M3/H is a silicon carbide (SiC) Schottky diode manufactured by Vishay General Semiconductor. It features a single configuration in a DO-221AC-2 surface-mount package. The device supports a maximum repetitive reverse voltage of 1.2 kV and an average forward current of 1 A. Key electrical parameters include a forward voltage of 1.85 V, a non-repetitive peak forward surge current of 12.5 A, and a reverse leakage current of 4.5 uA. It operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 12.5 W.
Verify the specific suffix H against official Vishay documentation to confirm reel packaging specifications. Ensure compatibility with standard SMD reflow profiles. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component for designs requiring high blocking voltage and efficient thermal performance. Compare the 1.2 kV rating and 1 A current capacity against circuit requirements. Evaluate the low forward voltage drop for efficiency gains in high-voltage applications compared to traditional silicon alternatives.
This component belongs to Vishay's VS-3C series of silicon carbide Schottky rectifiers. The series is engineered for high-efficiency power conversion systems. The specific model integrates advanced SiC material properties into a standardized surface-mount footprint suitable for automated manufacturing processes.
Consult official Vishay substitution guides for verified equivalents. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers. Ensure any substitute meets the same 1.2 kV voltage and 1 A current ratings.