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The VS-3C02EJ07-M3/H is a silicon carbide (SiC) Schottky diode manufactured by Vishay Semiconductors. It features a single configuration in a SlimSMA-e3 surface-mount package (DO-221AC-2). The device supports a maximum repetitive reverse voltage of 650 V and an average forward current of 2 A. Key electrical parameters include a forward voltage of 1.5 V, a peak non-repetitive surge forward current of 16.5 A, and a reverse leakage current of 100 nA. It operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 12.5 W.
Verify the specific suffix against official datasheets, as variations may exist between distributor listings and manufacturer documentation. Confirm package type and compliance status directly with the supplier before procurement to ensure alignment with design requirements.
Select this component for applications requiring compact surface-mount solutions with high thermal performance. Ensure the circuit design accommodates the 650 V blocking capability and 2 A continuous current rating while maintaining adequate thermal management for the DO-221AC-2 package.
This part belongs to Vishay's eSMP series of silicon carbide Schottky diodes. It is designed to replace traditional silicon rectifiers in high-efficiency power conversion systems, offering superior performance at elevated temperatures compared to standard silicon devices.
Direct substitutes should match the 650V/2A SiC specification in a DO-221AC-2 package. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers' offerings.