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The VS-3C02EJ12-M3/H is a silicon carbide (SiC) Schottky diode manufactured by Vishay General Semiconductor - Diodes Division. It features a single configuration in a DO-221AC-2 package, designed for surface mount installation. The device supports a maximum repetitive reverse voltage of 1.2 kV and an average forward current of 2 A. Key electrical characteristics include a forward voltage of 1.85 V at rated current and a low reverse leakage current of 150 nA. It withstands a non-repetitive peak forward surge current of 21 A and dissipates up to 12.5 W of power. The component operates reliably within a junction temperature range of -55°C to +175°C.
Verify the specific suffix designation against official Vishay documentation to confirm exact manufacturing specifications. Ensure that the ordering information matches the required package type and electrical ratings for the intended design. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.
Select this component when designing circuits requiring high-voltage blocking capabilities combined with low forward voltage characteristics. The 1.2 kV rating makes it suitable for medium-voltage applications where standard silicon diodes may fail. Consider the DO-221AC-2 package constraints for thermal management and PCB space allocation during the layout phase.
This device belongs to the eSMP series of silicon carbide Schottky diodes from Vishay. It represents a class of wide-bandgap semiconductors engineered for superior performance compared to traditional silicon rectifiers. The series is characterized by robust construction and reliability in demanding electronic environments.
Consult official Vishay substitution guides for verified equivalent parts. Ensure any replacement maintains the same voltage, current, and package specifications to guarantee circuit compatibility.