VS-3C04ED07T-M3/I

$1.67

Description：RF DIODE SCHOTTKY 650V 57W SMPD
Series：-

SKU:5e682f6ce24c Category: RF Diodes Brand: Vishay

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Product introduction

Product Detailed Parameters

Description：RF DIODE SCHOTTKY 650V 57W SMPD
Series：-
Mfr：Vishay
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：Schottky - Single
Voltage - Peak Reverse (Max)：650V
Current - Max：4:00 AM
Capacitance @ Vr, F：21pF @ 400V, 1MHz
Resistance @ If, F：-
Power Dissipation (Max)：57 W
Operating Temperature：-55°C ~ 175°C (TJ)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), Variant
Supplier Device Package：SMPD
Grade：-
Qualification：-

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VS-3C04ED07T-M3/I

Overview

The Vishay VS-3C04ED07T-M3/I is a 650 V Power SiC Gen 3 Merged PIN Schottky Diode rated for a continuous forward current of 4 A. It utilizes an SMPD 2L package with a typical height of 1.7 mm and features a minimum creepage and clearance distance of 3.6 mm. The device exhibits a typical forward voltage of 1.30 V at 25 °C and supports a maximum operating junction temperature of 175 °C. Electrical specifications include a reverse leakage current of 12 μA at 175 °C and a total capacitive charge of 12 nC at 400 V.

Feature Summary

MPS structure provides high ruggedness to forward current surge events
Positive VF temperature coefficient facilitates easy paralleling
Virtually no recovery tail and no switching losses ensure temperature invariant switching behavior

Applications

AC/DC PFC circuits
DC/DC ultra high frequency output rectification in FBPS converters
DC/DC ultra high frequency output rectification in LLC converters

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The '/I' suffix indicates tape and reel packaging, while the base part number denotes the component's electrical characteristics. Confirm compliance requirements such as RoHS status and halogen-free material categorization directly from the manufacturer's datasheet to ensure alignment with project specifications.

Selection Notes

Select this component for applications requiring hard switching efficiency over a wide temperature range. The SMPD 2L package offers a low profile suitable for space-constrained designs. Ensure thermal management accounts for the specified thermal resistance values and power dissipation limits at the intended mount temperature to maintain reliable operation within the 175 °C junction limit.

Part Context

This device belongs to the Vishay eSMP® Series of Silicon Carbide diodes. It represents Generation 3 technology designed to replace silicon ultrafast recovery diodes in high-performance applications. The product line emphasizes improved efficiency through thin wafer technology and robust mechanical design for industrial environments.