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Product Detailed Parameters
- Description：RF DIODE SCHOTTKY 650V 72W SMPD
- Series：-
- Mfr：Vishay
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：650V
- Current - Max：6:00 AM
- Capacitance @ Vr, F：27pF @ 400V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：72 W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), Variant
- Supplier Device Package：SMPD
- Grade：-
- Qualification：-
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Overview
The Vishay VS-3C06ED07T-M3/I is a 650 V Power SiC Gen 3 Merged PIN Schottky Diode rated for a continuous forward current of 6 A. It features a typical forward voltage of 1.30 V at 25 °C and reaches a maximum operating junction temperature of 175 °C. The reverse leakage current is specified at 16 μA at 175 °C, with a total capacitive charge of 17 nC at 400 V. Housed in an SMPD 2L surface-mount package, the device supports peak repetitive reverse voltage of 650 V and non-repetitive peak forward surge currents up to 42 A.
Feature Summary
- MPS structure provides high ruggedness against forward current surge events
- Positive VF temperature coefficient facilitates easy paralleling
- Virtually no recovery tail and no switching losses ensure temperature invariant switching behavior
Applications
- AC/DC PFC circuits
- DC/DC ultra high frequency output rectification in FBPS converters
- DC/DC ultra high frequency output rectification in LLC converters
Procurement Notes
Verify the specific ordering suffix '/I' against the manufacturer's official documentation to confirm delivery mode specifications. Ensure that the selected component meets all required environmental compliance standards, including RoHS compliance and halogen-free requirements, prior to final procurement decisions.
Selection Notes
Evaluate the thermal resistance from junction-to-mount when designing heat dissipation strategies. Confirm that the maximum allowable mount temperature aligns with the expected peak forward current requirements. Validate the capacitive energy characteristics against the specific reverse voltage conditions present in the target application circuit.
Part Context
This component belongs to the Vishay eSMP® series of wide band gap SiC based diodes. It utilizes thin wafer technology to improve forward voltage drop and overall efficiency. The device is designed as an optimum choice for high-speed hard switching applications requiring efficient operation over a wide temperature range.
Replacement Considerations
VS-3C08EV07T-M3/I
FAQ
What is the minimum creepage and clearance distance for this component?
The minimum creepage and clearance distance is 3.6 mm.
Does the device exhibit switching losses during operation?
No, the device exhibits virtually no recovery tail and no switching losses.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
