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Product Detailed Parameters
- Description：RF DIODE SCHOTTKY 650V 105W SMPD
- Series：-
- Mfr：Vishay
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：650V
- Current - Max：12:00 AM
- Capacitance @ Vr, F：54pF @ 400V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：105 W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), Variant
- Supplier Device Package：SMPD
- Grade：-
- Qualification：-
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Overview
The Vishay VS-3C12ED07T-M3/I is a 650 V Power SiC Gen 3 Merged PIN Schottky Diode rated for a continuous forward current of 12 A. It utilizes an SMPD 2L package with a typical height of 1.7 mm and features a minimum creepage and clearance distance of 3.6 mm. The device exhibits a typical forward voltage of 1.30 V at 25 °C and supports a maximum operating junction temperature of 175 °C. Reverse leakage current reaches 20 μA at 175 °C, while total capacitive charge is 34 nC at 400 V. Thermal resistance from junction to mount ranges from 1.1 to 1.4 °C/W.
Feature Summary
- MPS structure provides high ruggedness against forward current surge events
- Positive VF temperature coefficient facilitates easy paralleling
- Virtually no recovery tail and no switching losses ensure temperature invariant switching behavior
Applications
- AC/DC PFC circuits
- DC/DC ultra high frequency output rectification in FBPS converters
- LLC converters
Procurement Notes
Verify the specific ordering suffix '/I' corresponds to the 2000/reel delivery mode on a 13-inch diameter plastic tape and reel. Confirm that the component meets JESD 201 class 2 whisker test requirements and complies with RoHS directives as indicated by the halogen-free designation. Ensure thermal management designs account for the specified junction-to-mount thermal resistance limits under varying ambient conditions.
Selection Notes
Select this component when designing for hard switching applications requiring high efficiency over a wide temperature range. The SMPD 2L package offers a low profile suitable for space-constrained layouts. Consider the positive temperature coefficient of the forward voltage when sizing parallel configurations to ensure balanced current sharing without complex external compensation networks.
Part Context
This diode belongs to Vishay's eSMP® Series of Silicon Carbide devices. It represents Generation 3 technology utilizing thin wafer technology to improve forward voltage and overall efficiency compared to previous iterations. The merged PIN Schottky architecture combines the benefits of majority carrier conduction with robust blocking capabilities.
Replacement Considerations
Direct substitutes within the same series include the VS-3C08ED07T-M3/I (8 A) and VS-3C16ED07T-M3/I (16 A). Verify pinout compatibility and thermal characteristics before swapping between different current ratings in existing designs.
FAQ
What is the typical forward voltage drop at rated current?
The typical forward voltage (VF) is 1.30 V when measured at a forward current (IF) of 12 A and a junction temperature of 25 °C.
Does the device exhibit reverse recovery charge?
No, the device is a majority carrier diode using Schottky technology, resulting in virtually no recovery tail and no switching losses.
What is the maximum allowable junction temperature?
The maximum operating junction temperature (TJ) is +175 °C.
