ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 1200V 80A 463W MTP
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tray
- IGBT Type：NPT
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：4.91V @ 15V, 80A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：12-MTP Module
- Supplier Device Package：MTP
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：80 A
- Power - Max：463 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：8.28 nF @ 30 V
Download product information
Overview
The VS-40MT120UHTAPBF is a Vishay IGBT module featuring an N-channel configuration with serial connection. It operates within a voltage range of up to 1200 V collector-emitter and supports a maximum continuous collector current of 80 A. The device utilizes MTP packaging for PCB installation, providing 13 pins. It functions reliably between -40 °C and +150 °C junction temperatures, with a maximum power dissipation of 463 W and a switching speed capability of 60 kHz.
Feature Summary
- High-power semiconductor design utilizing trench IGBT technology
- Robust thermal management capabilities for demanding environments
- Integrated gate control interface for efficient switching
Applications
- Industrial motor drives
- Power supply inverters
- Welding equipment
Procurement Notes
Verify the exact suffix against official Vishay documentation to confirm specific testing or qualification variations. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before integration into final assemblies.
Selection Notes
Select this component when high current handling at 1200 V is required in a compact MTP footprint. Consider the 463 W dissipation rating and 60 kHz switching frequency against system thermal constraints and electromagnetic interference requirements during the design phase.
Part Context
This part belongs to Vishay's MTP series of insulated gate bipolar transistor modules. These components are engineered for medium to high-power applications requiring reliable performance under significant electrical loads and varying thermal conditions.
Replacement Considerations
Consult Vishay technical support for verified cross-reference data. Do not substitute without confirming pinout alignment, thermal resistance characteristics, and electrical parameter tolerances match the original design specifications.
