Diode Arrays VS-6CWQ10FN-M3 product image

VS-6CWQ10FN-M3

$0.61
  • Description:DIODE ARRAY SCHOT 100V 3.5A DPAK
  • Series:-

SKU:996c23b228c1 Category: Brand:

  
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VS-6CWQ10FN-M3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY SCHOT 100V 3.5A DPAK. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VS-6CWQ10FN-M3

  • Description:DIODE ARRAY SCHOT 100V 3.5A DPAK
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):3.5A
  • Voltage - Forward (Vf) (Max) @ If:960 mV @ 6 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 100 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252AA (DPAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VS-6CWQ10FN-M3

VS-6CWQ10FN-M3

Diode Arrays Overview

The VS-6CWQ10FN-M3 is a high-performance Schottky rectifier featuring a center tap configuration in a D-PAK (TO-252AA) surface-mount package. It provides a maximum average forward current of 7 A and a repetitive peak reverse voltage of 100 V. The device exhibits a low forward voltage drop, specified at 0.81 V at 3 A and 25 °C per leg. It supports a non-repetitive surge current of 440 A and operates within a junction temperature range of -40 to +150 °C.

Diode Arrays Feature Summary

  • Center tap configuration with dual anodes and common cathode
  • Guard ring structure for enhanced ruggedness and long-term reliability
  • Low forward voltage drop for improved efficiency
  • High frequency operation capability

Diode Arrays Applications

  • Disk drives
  • Switching power supplies
  • Converters
  • Freewheeling diodes
  • Battery charging circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Suffixes such as TR, TRL, or TRR indicate distinct packaging formats including tubes and reels. Confirm that the selected variant meets the required quantity per tube or reel specifications defined in the datasheet ordering information table.

Diode Arrays Selection Notes

Select this component for applications requiring a compact surface-mount solution with a center tap topology. Ensure the thermal design accommodates the specified thermal resistance values for both per-leg and per-device configurations. Validate that the operating conditions remain within the absolute maximum ratings for forward current and reverse voltage.

Diode Arrays Part Context

This part belongs to Vishay's Schottky Q series, designed for high-frequency applications. It utilizes silicon technology and features a popular D-PAK outline suitable for automated surface mount assembly. The product is halogen-free, RoHS compliant, and lead-free, adhering to environmental directives.

Diode Arrays Replacement Considerations

Direct replacements must match the D-PAK (TO-252AA) package, 100 V rating, and center tap configuration. Verify electrical parameters such as forward voltage and thermal resistance to ensure compatibility with the existing circuit design.

Diode Arrays FAQ

What is the typical junction capacitance per leg?

The typical junction capacitance per leg is 92 pF when measured at VR = 5 VDC, a test signal range of 100 kHz to 1 MHz, and 25 °C.

Does the device support avalanche energy?

Yes, the device has a rated non-repetitive avalanche energy of 5 mJ per leg at TJ = 25 °C, IAS = 1 A, and L = 10 mH.

What is the maximum voltage rate of change?

The maximum voltage rate of change (dV/dt) is 10,000 V/μs at the rated reverse voltage.

VS-6CWQ10FN-M3VS-6CWQ10FN-M3
$0.61
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