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VS-80TPS16L-M3 is listed in the Scrs range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is SCR 1.6KV 126A TO247AD. Review the specifications below when checking this part for your BOM.
The VS-80TPS16L-M3 is a high voltage phase control silicon controlled rectifier (SCR) manufactured by Vishay Semiconductors. It features an average on-state current of 80 A and a peak repetitive reverse voltage rating of 1600 V. The device utilizes glass passivation technology for reliable operation up to a maximum junction temperature of 150 °C. Packaged in a TO-247AD 3L through-hole configuration with long leads, it supports a non-repetitive peak surge current of 1000 A.
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the package style matches the required mounting constraints. Confirm thermal management specifications align with the application's heat dissipation needs. Validate that the gate triggering parameters are compatible with the driving circuitry before finalizing procurement decisions.
Select this component when high voltage blocking capability and robust surge handling are required in phase control scenarios. Evaluate the thermal resistance characteristics to ensure adequate heatsinking for the intended duty cycle. Consider the gate trigger current requirements relative to the available drive signal strength. Verify that the operating temperature range meets the environmental conditions of the target system.
This thyristor belongs to Vishay's high voltage SCR series designed for industrial power electronics. It serves as a critical switching element in applications requiring precise phase angle control or robust overvoltage protection. The long lead variant facilitates easier manual assembly and prototyping compared to standard surface mount alternatives.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capacities, and package dimensions. Verify compatibility with existing gate drive circuits and thermal management solutions before implementation.
The device can withstand a non-repetitive peak surge current of 1000 A under specified test conditions.
The glass passivation technology ensures reliable operation and protects the silicon structure, allowing for stable performance up to the maximum junction temperature.
The typical on-state voltage (VTM) is 1.16 V when conducting the rated average current at a junction temperature of 125 °C.
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