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Product Detailed Parameters
- Description：IGBT MODULE 600V 781W SOT227
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：1.3V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：-
- Power - Max：781 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：16.25 nF @ 30 V
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Overview
The VS-GA200SA60SP is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Vishay General Semiconductor. It features a single IGBT configuration housed in a SOT-227 chassis mount package. The device supports a maximum DC collector-emitter voltage of 600 V and delivers a rated power dissipation of 781 W. Designed for high-efficiency applications, it incorporates ultralow saturation voltage characteristics to minimize conduction losses.
Feature Summary
- Optimized for minimum saturation voltage and low switching speeds up to 5 kHz
- Ultralow VCE(on) design for lowest available conduction losses
- Chassis mount construction suitable for robust thermal management
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency power conversion systems
Procurement Notes
Verify the specific suffix and revision level against the official Vishay datasheet to ensure compatibility with target thermal and electrical requirements. Confirm that the SOT-227 mounting interface matches the mechanical constraints of the intended chassis assembly prior to procurement.
Selection Notes
Select this component when ultralow conduction losses are critical for system efficiency. Ensure the application operates within the specified 5 kHz frequency limit due to optimized switching characteristics. Validate thermal resistance parameters against the heatsink design to maintain junction temperatures within safe operating limits during continuous operation.
Part Context
This module belongs to Vishay's lineup of insulated gate bipolar transistors designed for medium-power industrial applications. It utilizes advanced silicon technology to achieve superior performance compared to standard IGBTs. The SOT-227 package provides a standardized form factor for easy integration into existing power electronics architectures requiring high current handling capabilities.
Replacement Considerations
Consult official cross-reference data for direct substitutes. Verify pinout compatibility and thermal resistance values when considering alternative modules from other manufacturers to ensure equivalent performance in the final assembly.
