VS-GB100DA60UP

Overview

The VS-GB100DA60UP is a Vishay Semiconductors Insulated Gate Bipolar Transistor (IGBT) module utilizing NPT Warp 2 Speed technology with an integrated HEXFRED antiparallel diode. It features a single switch configuration in a fully isolated SOT-227 package. Key electrical ratings include a collector-emitter voltage of 600 V, a continuous collector current of 100 A at 61 °C, and a typical on-state voltage of 2.4 V at 100 A and 25 °C. The device supports a maximum power dissipation of 447 W for the IGBT and 313 W for the diode at 25 °C case temperature.

Feature Summary

• NPT Warp 2 Speed IGBT technology providing a positive temperature coefficient for easy paralleling
• HEXFRED antiparallel diodes featuring ultrasoft reverse recovery characteristics
• Fully isolated package design with very low internal inductance

Applications

• Uninterruptible Power Supplies (UPS)
• Switched Mode Power Supplies (SMPS)
• Welding equipment
• Induction heating systems

Procurement Notes

This component is designated as Not Available for New Designs. Engineers must verify that existing inventory meets project requirements before finalizing procurement plans. Since new design integration is prohibited, supply chain planning should prioritize stock utilization or transition to the recommended replacement part number immediately to avoid future obsolescence risks.

Selection Notes

Selection requires evaluating thermal management capabilities within the SOT-227 outline, specifically considering the junction-to-case thermal resistance values provided in the datasheet. Designers must ensure gate drive voltages remain within the specified ±20 V limit and account for the square RBSOA when designing protection circuits for inductive loads operating near the 600 V breakdown threshold.

Part Context

The VS-GB100DA60UP belongs to the VS-GB series of high-power IGBT modules manufactured by Vishay Semiconductors. This series is characterized by its industry-standard SOT-227 footprint, which facilitates direct mounting to heatsinks and plug-in compatibility with other packages sharing this mechanical form factor. The module integrates both the switching transistor and the freewheeling diode into a single insulated unit.

Replacement Considerations

Vishay explicitly recommends using the VS-GB90DA60U as the substitute for new designs. This alternative maintains the same SOT-227 package outline and circuit configuration while offering updated specifications compatible with modern power conversion applications requiring similar voltage and current handling capabilities.

FAQ

What is the maximum isolation voltage rating for the VS-GB100DA60UP?

The module provides an isolation voltage of 2500 V between any terminal and the case, tested for one minute.

Does the VS-GB100DA60UP support parallel operation?

Yes, the device utilizes NPT Warp 2 Speed IGBT technology with a positive temperature coefficient, which facilitates easy assembly and parallel operation.

What is the typical reverse recovery time for the integrated antiparallel diode?

At a forward current of 50 A and a rate of change of current of 200 A/μs, the typical reverse recovery time is 95 ns.