VS-GB100TP120N

VS-GB100TP120N

  • Description:IGBT MOD 1200V 200A INT-A-PAK
  • Series:-

SKU:5d4f9b5baf23 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 200A INT-A-PAK
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:INT-A-Pak
  • Supplier Device Package:INT-A-PAK
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):200 A
  • Power - Max:650 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:7.43 nF @ 25 V

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VS-GB100TP120N

Part Context

The VS-GB100TP120N is a power semiconductor module manufactured by Vishay General Semiconductor - Diodes Division. It belongs to the company's discrete and module diode product portfolio, designed for high-power industrial applications requiring robust voltage handling capabilities.

Replacement Considerations

Public documentation confirms that the VS-GB100TP120N is obsolete and no longer manufactured. The FF300R12KT4HOSA1 is identified as a direct substitute part number available in the market.

VS-GB100TP120NVS-GB100TP120N

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