VS-GB100TS60NPBF

VS-GB100TS60NPBF

  • Description:IGBT MOD 600V 108A INT-A-PAK
  • Series:-

SKU:30eeb7b983e7 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 600V 108A INT-A-PAK
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk
  • IGBT Type:NPT
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2.85V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:INT-A-Pak
  • Supplier Device Package:INT-A-PAK
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):108 A
  • Power - Max:390 W
  • Current - Collector Cutoff (Max):100 µA
  • Input Capacitance (Cies) @ Vce:-

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VS-GB100TS60NPBF

Overview

The VS-GB100TS60NPBF is an NPT half-bridge IGBT module from Vishay General Semiconductor - Diodes Division. It features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 100 A. The device utilizes an INT-A-PAK package for surface-mount installation. Key electrical parameters include a typical on-state voltage of 2.85 V at 15 V gate drive and 100 A collector current.

Feature Summary

  • NPT technology construction
  • Half-bridge configuration
  • INT-A-PAK surface-mount packaging

Applications

  • Industrial motor drives
  • Power supply inverters
  • High-frequency switching applications

Procurement Notes

This component is officially marked as obsolete and no longer manufactured by the producer. Sourcing new original units is not possible through standard distribution channels. Engineers must verify the authenticity of any existing stock found in secondary markets, as availability is limited to surplus or recycled inventory only.

Selection Notes

Designers should prioritize alternative active components with similar voltage and current ratings due to the discontinued status of this part. Evaluate replacement modules for compatible pinout, thermal resistance, and gate drive requirements to ensure seamless integration into existing circuit designs without requiring significant layout modifications.

Part Context

The VS-GB100TS60NPBF belongs to the GB series of IGBT modules designed for high-power density applications. It integrates fast recovery diodes within the half-bridge structure. The INT-A-PAK package offers improved thermal performance compared to traditional leaded modules, facilitating efficient heat dissipation in compact power electronic systems.

Replacement Considerations

  • VS-GB100TP120N

VS-GB100TS60NPBFVS-GB100TS60NPBF

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