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The VS-GB300TH120N is a Vishay Semiconductors IGBT power module featuring a 1200 V collector-emitter voltage and a 300 A continuous collector current at 80 °C case temperature. It utilizes a Double INT-A-PAK package with an isolated copper baseplate using DCB technology. The device includes an antiparallel fast and soft reverse recovery freewheeling diode (FWD). Key electrical parameters include a typical VCE(on) of 2.00 V at 300 A and 25 °C, and a maximum junction temperature of 150 °C. It offers 10 μs short circuit capability and operates within a frequency range of 8 kHz to 30 kHz.
Verify the specific revision date on the datasheet before procurement, as Vishay documents are subject to change without notice. Confirm that the Double INT-A-PAK mounting dimensions align with your thermal interface design. Ensure gate drive voltages remain within the ± 20 V absolute maximum rating to prevent device failure during operation.
Select this module for applications requiring high current density and rugged short-circuit performance. The positive temperature coefficient of VCE(on) facilitates safe parallel operation. Verify thermal management capabilities against the specified RthJC values to maintain junction temperatures below the 150 °C limit under expected load conditions.
This component belongs to Vishay's Molding Type Module series designed for general inverter applications. It is part of the GB300 family, which provides ultra-low conduction loss and high reliability. The module integrates both the IGBT switch and the freewheeling diode into a single compact package for efficient power conversion.
Public confirmed substitute part numbers are not available in the provided documentation. Designers should verify pin compatibility and thermal characteristics when considering alternative manufacturers' modules with similar voltage and current ratings.
The module has a short circuit withstand time of 10 μs at TJ = 125 °C, VGE = 15 V, and VCC = 900 V.
Yes, it features a fast and soft reverse recovery antiparallel freewheeling diode (FWD) integrated within the half-bridge configuration.
The recommended mounting torque for the M6 power terminal screws is between 2.5 and 5.0 Nm.