VS-GT100DA120U

Overview

The VS-GT100DA120U is a single IGBT module manufactured by Vishay Semiconductors. It features a collector-emitter maximum voltage (VCEO) of 1.2 kV and a continuous collector current of 187 A at 25 °C. The device has a power dissipation rating of 890 W and operates within a temperature range of -40 °C to +150 °C. It utilizes silicon technology and is housed in an SOT-227-4 package designed for screw mounting.

Feature Summary

• Single IGBT configuration for high-power switching applications
• SOT-227-4 package optimized for thermal management and mechanical stability
• Silicon-based construction ensuring robust performance under high voltage conditions

Applications

• Industrial motor drives
• Power supply systems
• Inverter circuits

Procurement Notes

Verify the specific suffix against official datasheets, as variations may exist between U and UF designations. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure sourcing channels provide authentic components with traceable manufacturing records to maintain system reliability.

Selection Notes

Select this component for applications requiring 1.2 kV blocking capability and high current handling. Evaluate thermal resistance requirements based on the 890 W dissipation rating. Compare against alternative SOT-227 modules if higher current density or different packaging constraints are necessary for the specific design.

Part Context

This part belongs to Vishay's IGBT module portfolio, specifically utilizing the SOT-227 form factor. It serves as a discrete power switching element within larger semiconductor assemblies. The module is distinct from thyristor or diode-only packages within the same brand lineup.

Replacement Considerations

Consult official substitution guides for equivalent Vishay parts. Verify pin compatibility and electrical parameters before replacing with other SOT-227 IGBT modules.