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Product Detailed Parameters
- Description：IGBT MOD 1200V 180A INT-A-PAK
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：Trench
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：INT-A-PAK (3 + 4)
- Supplier Device Package：INT-A-PAK
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：180 A
- Power - Max：652 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：12.8 nF @ 30 V
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Overview
The VS-GT100TP120N is a half bridge IGBT power module rated at 1200 V and 100 A. It utilizes low VCE(sat) trench IGBT technology with a maximum junction temperature of 175 °C. The device features a short circuit capability of 10 μs, an isolated copper baseplate using DCB technology, and fast soft reverse recovery antiparallel FWD. Typical collector-emitter saturation voltage is 1.90 V at 100 A and 25 °C. Operating speed ranges from 8 kHz to 30 kHz. The package type is INT-A-PAK.
Feature Summary
- Low conduction loss achieved through trench IGBT technology
- High short circuit ruggedness with 10 μs withstand time
- Positive temperature coefficient for VCE(sat)
- Isolated copper baseplate utilizing Direct Copper Bonding
Applications
- Uninterruptable Power Supply (UPS)
- Inverter for motor drive
- AC and DC servo drive amplifier
Procurement Notes
Verify the specific revision date on the datasheet before ordering, as Vishay documents are subject to change without notice. Confirm that the INT-A-PAK mounting dimensions match the mechanical constraints of the target application. Ensure thermal interface material selection supports the specified maximum junction temperature of 175 °C for reliable operation under load.
Selection Notes
Select this module for applications requiring high current density in a compact form factor. The positive temperature coefficient aids in parallel operation stability. Verify gate drive requirements against the ± 15 V specification. Consider the 652 W maximum power dissipation rating when designing the heatsink system to maintain junction temperatures within safe operating limits.
Part Context
This component belongs to Vishay's Half Bridge IGBT Power Module series. It is designed for general inverter and UPS applications. The module integrates both the IGBT switch and the antiparallel freewheeling diode into a single insulated package. It represents a solution for medium-power switching applications requiring robust performance.
Replacement Considerations
Check for updated revisions within the VS-GT100TP series. Verify pinout compatibility if substituting with other INT-A-PAK modules. Ensure electrical ratings of potential replacements meet or exceed the 1200 V and 100 A specifications.
