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The VS-GT105LA120UX is a single NPT IGBT module from Vishay General Semiconductor, designed for chassis mounting in the SOT-227 package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 134 A at 25°C. The device has a typical saturation voltage of 2.39 V and a power dissipation rating of 463 W. Operating temperatures range from -40°C to +150°C.
Verify the specific suffix against the official datasheet to confirm exact electrical characteristics and thermal resistance values. Ensure the procurement channel provides authentic Vishay components with traceable documentation. Confirm that the SOT-227 mounting requirements match the application's mechanical constraints before ordering.
Select this component for applications requiring high voltage blocking capability and substantial current handling in a compact chassis-mount form factor. Consider the 1200V rating for medium-voltage AC or DC bus applications. Evaluate the 463W power dissipation against the available heatsinking capacity to ensure safe junction temperature operation under load.
This part belongs to the VS-GT series of insulated-gate bipolar transistors manufactured by Vishay General Semiconductor. These modules are engineered for robust performance in high-power electronic conversion systems, offering a balance of switching speed and conduction efficiency within the SOT-227 footprint.
The VS-GT55LA120UX is a documented substitute within the same product family, though it offers lower current ratings. Verify compatibility regarding pinout, thermal interface, and voltage specifications when considering alternative models.