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The VS-GT175DA120U is a Trench IGBT with an integrated antiparallel diode in a fully isolated SOT-227 package. It features a 1200 V collector-emitter breakdown voltage and supports a continuous collector current of 175 A at 90 °C case temperature. The typical on-state voltage is 1.73 V at 100 A and 25 °C. The device includes HEXFRED® antiparallel diodes with ultrasoft reverse recovery characteristics and offers a 10 μs short circuit capability. Designed for high-efficiency power conversion, it operates within a junction temperature range of -40 °C to 150 °C.
Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm that the application environment remains within the specified thermal limits to ensure the 100 A terminal current constraint is not exceeded during operation.
Select this component for applications requiring high current density and low internal inductance. Ensure the gate drive circuitry can support the required switching frequencies between 8 kHz and 30 kHz while managing the total gate charge requirements under varying load conditions.
This part belongs to Vishay's Generation II SOT-227 family, designed as a drop-in replacement for industry-standard outlines. It integrates advanced trench technology to improve efficiency compared to older planar devices while maintaining mechanical compatibility with existing board layouts.
Check datasheet document number 93990 for any product change notifications or obsolescence notices. Verify pinout compatibility if substituting with other SOT-227 IGBT modules from different manufacturers.