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Product Detailed Parameters
- Description：MODULES IGBT - IAP IGBT
- Series：FRED Pt®
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.12V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：INT-A-PAK
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：177 A
- Power - Max：429 W
- Current - Collector Cutoff (Max)：200 µA
- Input Capacitance (Cies) @ Vce：-
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Overview
The VS-GT200TP065U is a Trench IGBT half-bridge module rated at 650 V with an INT-A-PAK package. It features a typical collector-emitter saturation voltage of 1.90 V at 200 A and 25 °C, alongside a maximum continuous collector current of 177 A at 25 °C case temperature. The integrated anti-parallel diode exhibits low reverse recovery charge and switching energy. Operating junction temperatures range from -40 °C to +175 °C, supporting high-frequency applications between 8 kHz and 30 kHz.
Feature Summary
- Trench IGBT technology providing very low on-state voltage drop and positive temperature coefficient for safe parallel operation
- FREDPt® anti-parallel diode engineered for low reverse recovery charge and minimal switching energy losses
- Direct mounting capability on heatsink with industry-standard INT-A-PAK form factor
Applications
- Uninterruptible Power Supply (UPS) systems
- Industrial welding equipment
- High-efficiency power conversion circuits
Procurement Notes
Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing specifications. Confirm that the INT-A-PAK mechanical dimensions align with the intended thermal management design. Ensure gate drive parameters remain within the specified ±20 V limits to prevent device damage during operation.
Selection Notes
Select this component when designing circuits requiring high current handling in a compact footprint. Evaluate the thermal resistance values to ensure adequate heat dissipation for the target operating environment. Consider the switching speed characteristics relative to the required electromagnetic interference constraints in the final assembly.
Part Context
This device belongs to Vishay's INT-A-PAK family of insulated gate bipolar transistors. It utilizes trench technology to optimize conduction and switching performance. The module integrates both the IGBT and its anti-parallel diode into a single standardized package for simplified system integration.
Replacement Considerations
The document explicitly identifies VS-GT200TS065N as the alternative device for new designs. Verify electrical compatibility and pinout alignment before substituting this obsolete part number.
