VS-GT200TS065N

$74.41

Description：MODULES IGBT - IAP IGBT
Series：FRED Pt®

SKU:e747126235ea Category: IGBT Modules Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

Product Detailed Parameters

Description：MODULES IGBT - IAP IGBT
Series：FRED Pt®
Mfr：Vishay General Semiconductor - Diodes Division
Package：Box
IGBT Type：Trench
Configuration：Half Bridge Inverter
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 200A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：INT-A-PAK IGBT
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：193 A
Power - Max：517 W
Current - Collector Cutoff (Max)：100 µA
Input Capacitance (Cies) @ Vce：-

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VS-GT200TS065N

Overview

The VS-GT200TS065N is a half bridge high speed IGBT module utilizing Trench IGBT technology and Gen4 FRED Pt anti-parallel diodes. It features an INT-A-PAK package with Al2O3 DBC for low thermal resistance. The device supports a collector-emitter voltage of 650 V and a continuous collector current of 144 A at TC = 80 °C. Typical on-state voltage is 1.83 V at IC = 200 A and TJ = 25 °C. Operating junction temperature ranges from -40 to +175 °C, suitable for frequencies between 8 kHz and 30 kHz.

Feature Summary

Integrates Trench IGBT technology with ultra soft reverse recovery characteristics
Designed for industrial level applications with direct heatsink mounting capability
Features very low junction to case thermal resistance and low EMI

Applications

High current inverter stages
Railway equipment power inverters
Welding equipment output stages

Procurement Notes

Verify the specific revision date against the latest Vishay datasheet before finalizing designs. Confirm that the INT-A-PAK mechanical dimensions match the target heatsink interface requirements. Ensure gate drive voltages remain within the specified ±20 V limit to prevent damage. Validate thermal management strategies based on the provided junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component for applications requiring optimized performance in high current inverter stages where switching losses must be minimized. The N suffix indicates an ultrafast IGBT variant designed for lower turn-off energy loss compared to standard variants. Consider the 650 V rating and 200 A nominal current capacity when sizing for specific load requirements and safety margins.

Part Context

This part belongs to the VS-GT series of half bridge modules manufactured by Vishay Semiconductors. It utilizes the INT-A-PAK package, which is mechanically compatible with standard 34 mm industrial footprints. The series offers options for either low VCE(on) or low Eoff depending on the application's priority for conduction versus switching efficiency.