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Product Detailed Parameters
- Description：ECONO - 4 PACK IGBT
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Box
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：64 A
- Power - Max：231 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：-
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Overview
The VS-GT50YF120NT is a Vishay Semiconductors IGBT Fourpack Module featuring Trench gate field stop technology and integrated HEXFRED diodes. It provides a collector-emitter voltage of 1200 V, with continuous collector currents of 64 A at 25 °C and 50 A at 66 °C case temperature. The module utilizes an ECONO 2 package with a copper baseplate for low thermal resistance and includes an internal NTC thermistor. Designed for industrial applications operating between 8 kHz and 30 kHz, it offers square RBSOA and positive VCE(on) temperature coefficient characteristics.
Feature Summary
- Trench gate field stop IGBT technology combined with HEXFRED low Qrr diodes for optimized switching performance
- ECONO 2 package design with copper baseplate enabling direct heatsink mounting and low stray inductance
- Integrated internal NTC thermistor for precise junction temperature monitoring
- Positive VCE(on) temperature coefficient ensuring stable parallel operation and rugged transient performance
Applications
- Switching Mode Power Supplies (SMPS)
- High Frequency Welding Inverters
- Industrial Motor Drives
Procurement Notes
Verify the current manufacturing status before procurement as the datasheet explicitly states this component is not recommended for new designs. Confirm that the designated alternative device meets all electrical and mechanical requirements for your specific application circuit to ensure compliance and availability.
Selection Notes
Select this module for applications requiring high efficiency and low EMI within the 8 kHz to 30 kHz frequency range. Ensure the cooling system maintains the case temperature below 66 °C to achieve the rated 50 A continuous current. Validate the gate drive voltage against the specified 15 V typical setting for optimal switching loss characteristics.
Part Context
This component belongs to Vishay's ECONO 2 series of insulated gate bipolar transistor modules. It is part of the broader family of power semiconductor devices designed for industrial market qualification. The module integrates four independent IGBT/diode pairs into a single compact footprint to simplify PCB layout and reduce parasitic inductance in power circuits.
Replacement Considerations
The official alternative device specified by Vishay is the VS-GT51YF120NT. Verify that the replacement matches the required current ratings and thermal characteristics for your specific design constraints.
