SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The VS-GT80DA120U is a single-switch IGBT module with an integrated antiparallel diode, utilizing Trench IGBT technology. It features a collector-emitter voltage (Vces) of 1200 V and a continuous collector current (Ic) of 80 A at 104 °C case temperature. The typical on-state voltage (Vce(on)) is 2.0 V at 80 A and 25 °C. Designed for switching frequencies between 8 kHz and 30 kHz, the device supports a maximum junction temperature of 150 °C. It incorporates HEXFRED® low Qrr diodes and offers a short circuit capability of 10 μs.
Verify component authenticity by cross-referencing the Vishay document number 96379 against official manufacturer channels. Confirm that the specific ordering suffix matches the required technical specifications, as variations may exist within the product family. Ensure compliance with material categorization definitions provided in Vishay documentation before finalizing procurement.
Select this component for applications requiring high-voltage handling up to 1200 V and currents up to 80 A. Consider the thermal impedance characteristics when designing heatsinking solutions, noting the distinct RthJC values for the IGBT and diode sections. Validate gate drive requirements against the specified threshold voltage and total gate charge parameters for optimal switching performance.
This module belongs to the VS-GT series of insulated gate bipolar transistors manufactured by Vishay Semiconductors. It utilizes Generation 2 SOT-227 packaging, which provides industry-standard dimensions for compatibility with existing designs. The 'U' suffix indicates ultrafast switching characteristics, distinguishing it from standard speed variants within the same voltage and current rating class.
Direct replacements must match the 1200 V / 80 A rating and SOT-227 outline. Verify electrical parameters such as Vce(on), switching losses, and reverse recovery charge against the original datasheet to ensure system compatibility.