VS-GT80DA120U

VS-GT80DA120U

$30.69
  • Description:IGBT MOD 1200V 139A 658W SOT227
  • Series:HEXFRED®

SKU:1dce1c4b2ff5 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MOD 1200V 139A 658W SOT227
  • Series:HEXFRED®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • IGBT Type:Trench
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:2.55V @ 15V, 80A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):139 A
  • Power - Max:658 W
  • Current - Collector Cutoff (Max):100 µA
  • Input Capacitance (Cies) @ Vce:4.4 nF @ 25 V

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VS-GT80DA120U

Overview

The VS-GT80DA120U is a single-switch IGBT module with an integrated antiparallel diode, utilizing Trench IGBT technology. It features a collector-emitter voltage (Vces) of 1200 V and a continuous collector current (Ic) of 80 A at 104 °C case temperature. The typical on-state voltage (Vce(on)) is 2.0 V at 80 A and 25 °C. Designed for switching frequencies between 8 kHz and 30 kHz, the device supports a maximum junction temperature of 150 °C. It incorporates HEXFRED® low Qrr diodes and offers a short circuit capability of 10 μs.

Feature Summary

  • Positive VCE(on) temperature coefficient designed to facilitate easy parallel operation
  • Fully isolated SOT-227 package enabling direct mounting to heatsinks
  • Very low internal inductance (≤ 5 nH typical) to reduce EMI and snubber requirements

Applications

  • Uninterruptible Power Supplies (UPS)
  • Switched Mode Power Supplies (SMPS)
  • Induction Heating Systems
  • Welding Equipment

Procurement Notes

Verify component authenticity by cross-referencing the Vishay document number 96379 against official manufacturer channels. Confirm that the specific ordering suffix matches the required technical specifications, as variations may exist within the product family. Ensure compliance with material categorization definitions provided in Vishay documentation before finalizing procurement.

Selection Notes

Select this component for applications requiring high-voltage handling up to 1200 V and currents up to 80 A. Consider the thermal impedance characteristics when designing heatsinking solutions, noting the distinct RthJC values for the IGBT and diode sections. Validate gate drive requirements against the specified threshold voltage and total gate charge parameters for optimal switching performance.

Part Context

This module belongs to the VS-GT series of insulated gate bipolar transistors manufactured by Vishay Semiconductors. It utilizes Generation 2 SOT-227 packaging, which provides industry-standard dimensions for compatibility with existing designs. The 'U' suffix indicates ultrafast switching characteristics, distinguishing it from standard speed variants within the same voltage and current rating class.

Replacement Considerations

Direct replacements must match the 1200 V / 80 A rating and SOT-227 outline. Verify electrical parameters such as Vce(on), switching losses, and reverse recovery charge against the original datasheet to ensure system compatibility.

VS-GT80DA120UVS-GT80DA120U
$30.69
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