Diode Arrays VT1045CHM3/4W product image

VT1045CHM3/4W

  • Description:DIODE ARR SCHOTT 45V 5A TO-220-3
  • Series:-

SKU:a95c8f1254ea Category: Brand:

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VT1045CHM3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 5A TO-220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VT1045CHM3/4W

  • Description:DIODE ARR SCHOTT 45V 5A TO-220-3
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:580 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr:500 µA @ 45 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VT1045CHM3/4W

VT1045CHM3/4W

Diode Arrays Overview

The VT1045CHM3/4W is a dual low-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a common cathode configuration housed in a TO-220AB package. The device supports a maximum repetitive peak reverse voltage of 45 V and provides a total maximum average forward rectified current of 10 A, with 5.0 A per diode. Peak forward surge current reaches 100 A per diode. Typical instantaneous forward voltage is 0.41 V at an operating current of 5.0 A. The component operates within a junction temperature range of -40 °C to +150 °C.

Diode Arrays Feature Summary

  • Utilizes Trench MOS Schottky technology for ultra-low forward voltage drop and reduced power losses
  • Designed for high efficiency operation in switching applications
  • Features matte tin plated leads that are solderable per J-STD-002 standards
  • Halogen-free construction compliant with RoHS directives

Diode Arrays Applications

  • High frequency DC/DC converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package variant and compliance status. Confirm that the M3 suffix meets JESD 201 class 1A whisker test requirements if applicable. Ensure thermal management aligns with the specified junction-to-case thermal resistance values during integration.

Diode Arrays Selection Notes

Select this component for designs requiring low forward voltage drops to minimize conduction losses. Evaluate the thermal resistance characteristics relative to the expected ambient temperatures and duty cycles. Verify that the 45 V reverse voltage rating accommodates transient spikes in the target circuit environment.

Diode Arrays Part Context

This part belongs to the VT1045C series of dual low-voltage Trench MOS Barrier Schottky Rectifiers. The product line includes variations such as the VIT1045C for surface mount applications. These devices are engineered to provide superior performance compared to standard silicon rectifiers in low-voltage, high-current scenarios.

Diode Arrays Replacement Considerations

VT1045C-M3/4W

Diode Arrays FAQ

What is the typical instantaneous forward voltage at 5.0 A?

The typical instantaneous forward voltage is 0.41 V when tested at an average forward current of 5.0 A.

Does the component meet lead whisker testing standards?

Yes, the M3 suffix indicates that the terminals meet the JESD 201 class 1A whisker test requirement.

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is rated at 45 V.

VT1045CHM3/4WVT1045CHM3/4W

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