VT6M1T2CR

VT6M1T2CR

  • Description:MOSFET N/P-CH 20V 0.1A VMT6
  • Series:-

SKU:c71b25cbe8ad Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 0.1A VMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:100mA
  • Rds On (Max) @ Id, Vgs:3.5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:7.1pF @ 10V
  • Power - Max:120mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:VMT6
  • Grade:-
  • Qualification:-

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VT6M1T2CR

Overview

The VT6M1T2CR is a complementary small-signal MOSFET featuring an N-channel and P-channel pair within a single VMT6 package. It operates with a drain-source voltage of 20V and supports continuous drain currents of 0.1A for the N-channel and 0.2A for the P-channel. The device exhibits low on-resistance, typically 6.0Ω at 1.2V drive for the N-channel and 1.6Ω at 1.5V drive for the P-channel. Designed for surface mount applications, it offers a power dissipation capacity of 0.15W and functions reliably across a storage temperature range of -55°C to 150°C.

Feature Summary

  • Complementary N+P dual configuration in a compact SOT-563 footprint
  • Optimized for low-voltage drive operations down to 1.2V
  • RoHS compliant construction without halogenated flame retardants

Applications

  • Battery-powered portable electronic devices requiring space-saving power switches
  • Low-voltage signal routing and level shifting circuits
  • Power management sections in mobile communication equipment

Procurement Notes

Verify the specific ordering suffix T2CR to confirm taping packaging and unit quantity specifications. Confirm supply status as the base part number indicates end-of-life processing. Ensure compatibility with existing reel handling equipment if integrating into automated assembly lines. Cross-reference the VMT6 package code for accurate footprint verification during PCB layout finalization.

Selection Notes

Select this component when a matched N-P pair is required for push-pull or complementary switching applications. The 20V rating suits low-voltage logic interfaces rather than high-power industrial loads. Consider the specific Rds(on) values at intended gate drive voltages to ensure adequate current handling. The VMT6 package size is critical for dense board layouts where standard SOT-363 dimensions are insufficient.

Part Context

This part belongs to ROHM's complementary MOSFET family designed for miniaturization. It replaces discrete N-channel and P-channel solutions by integrating both transistors into one VMT6 package. This integration reduces board space and simplifies assembly processes compared to using two separate components.

Replacement Considerations

The EM6M2T2R is listed as a similar specification replacement. Verify pinout compatibility and exact Rds(on) tolerances before substitution. The EM6M2 utilizes an EMT6 package which differs slightly in physical dimensions from the VMT6 used by the VT6M1.

VT6M1T2CRVT6M1T2CR

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