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The VT6T12T2R is a dual PNP bipolar junction transistor array manufactured by Rohm Semiconductor. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. The device offers a transition frequency of 300MHz and a maximum power dissipation of 150mW. It utilizes the VMT6 surface-mount package, which corresponds to the SOT-563 form factor with six terminals. The component is designed for high-speed switching applications within specified thermal limits.
Verify component availability status as this part may be subject to obsolescence or last-time-buy restrictions. Confirm RoHS compliance requirements against specific project standards. Ensure sourcing channels provide valid traceability documentation. Check for alternative active components if long-term supply stability is required for production planning.
Select this component when a dual PNP array is required in a VMT6 package. Consider the 50V voltage rating and 100mA current limit for circuit design constraints. Evaluate the 300MHz transition frequency against signal speed requirements. Compare thermal dissipation capabilities with available PCB copper area for heat management.
This part belongs to Rohm's Bipolar (BJT) Transistor Array category. It is specifically designed as a dual PNP configuration. The VMT6 package provides a small footprint for surface-mount technology applications. It serves as a discrete solution for integrating multiple transistors in compact electronic designs.
The VT6X2 is listed as a similar specification replacement option. Verify pin compatibility and electrical parameter alignment before substitution. Note that the VT6X2 may have different packaging dimensions or lifecycle status.