ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2PNP DUAL 20V 200MA VMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：20V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 6V
- Power - Max：150mW
- Frequency - Transition：350MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：VMT6
- Grade：-
- Qualification：-
Download product information
Overview
The VT6T1T2R is a dual PNP bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It integrates two independent PNP transistors within a VMT6 surface-mount package, which corresponds to the SOT-363 outline. The device features a collector-emitter voltage (VCEO) of -50V and a continuous collector current (IC) of -100mA. Key electrical parameters include a minimum DC current gain (hFE) of 120 at 1mA and 6V, and a transition frequency (fT) of 300MHz. The maximum power dissipation is rated at 150mW, with an operating junction temperature range up to 150°C.
Feature Summary
- Integrates two independent PNP transistor elements in a compact surface-mount package to reduce board space.
- High-speed switching capability supported by a 300MHz transition frequency for general-purpose applications.
- Independent transistor configuration eliminates internal interference between circuit elements.
Applications
- General-purpose small signal amplification circuits
- Switching applications requiring dual PNP logic control
- Audio pre-amplifier stages
Procurement Notes
Verify the specific ordering suffix T2R confirms tape-and-reel packaging containing 8000 units per reel. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as supply status may vary. Ensure the VMT6 package code matches the required footprint for PCB layout.
Selection Notes
Select this component when a dual PNP configuration is required in a minimal footprint. Compare against single BJT solutions if separate biasing is needed. Verify that the 150mW power dissipation rating suffices for the intended thermal environment. Check hFE binning requirements if precise gain matching is critical for the application.
Part Context
The VT6T1T2R belongs to ROHM's family of dual bipolar transistors designed for space-constrained designs. It serves as a compact alternative to discrete dual-transistor setups, offering matched characteristics within a single package. The VMT6 package is standard for low-power surface-mount applications in consumer electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult ROHM technical support or distributor cross-reference tools for equivalent dual PNP devices with compatible VMT6/SOT-363 footprints and similar electrical ratings.
FAQ
What is the maximum power dissipation for the VT6T1T2R?
The maximum power dissipation (Pd) is 150mW.
Does the VT6T1T2R contain integrated resistors?
No, the VT6T1T2R is a pure dual PNP bipolar transistor array without built-in resistors.
What is the transition frequency (fT) of this device?
The transition frequency is specified as 300MHz.
