VT6X11T2R

VT6X11T2R

$0.46
  • Description:TRANS 2NPN DUAL 20V 200MA VMT6
  • Series:-

SKU:95fdc416b915 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 20V 200MA VMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 2V
  • Power - Max:150mW
  • Frequency - Transition:400MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:VMT6
  • Grade:-
  • Qualification:-

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VT6X11T2R

Overview

The VT6X11T2R is a dual NPN bipolar junction transistor array manufactured by ROHM Semiconductor. It utilizes the VMT6 surface-mount package, equivalent to SOT-563-6, with dimensions of 1.2x1.2 mm and a thickness of 0.55 mm. The device features a collector-emitter voltage (VCEO) of 20 V and a continuous collector current (IC) of 0.2 A. DC current gain (hFE) ranges from 120 to 560 at 1 mA and 2 V. Power dissipation is rated at 150 mW, with a transition frequency (fT) of 350 MHz. The maximum operating temperature is +150°C, and it is supplied in tape and reel packaging.

Feature Summary

  • Dual NPN configuration within a compact surface-mount footprint
  • High-frequency performance suitable for signal processing applications
  • Low power dissipation rating for thermal efficiency

Applications

  • Current mirror circuits
  • General-purpose switching applications
  • Signal amplification stages

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notifications, as availability may be limited. Ensure storage conditions remain within specified temperature ranges to maintain device integrity prior to assembly.

Selection Notes

Select this component for designs requiring dual NPN transistors in a minimal space-constrained layout. Verify that the 20 V voltage rating and 0.2 A current limits align with circuit requirements. Consider the 350 MHz transition frequency for high-speed signal handling needs.

Part Context

This part belongs to ROHM's series of complex bipolar transistors designed for compact electronic systems. The VMT6 package allows for high-density PCB mounting. It serves as a discrete solution for applications previously using larger dual-transistor modules.

Replacement Considerations

The VT6Z1 is listed as a similar specification part number. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure the replacement meets the same package and polarity requirements.

VT6X11T2RVT6X11T2R
$0.46
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