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The VT6X11T2R is a dual NPN bipolar junction transistor array manufactured by ROHM Semiconductor. It utilizes the VMT6 surface-mount package, equivalent to SOT-563-6, with dimensions of 1.2x1.2 mm and a thickness of 0.55 mm. The device features a collector-emitter voltage (VCEO) of 20 V and a continuous collector current (IC) of 0.2 A. DC current gain (hFE) ranges from 120 to 560 at 1 mA and 2 V. Power dissipation is rated at 150 mW, with a transition frequency (fT) of 350 MHz. The maximum operating temperature is +150°C, and it is supplied in tape and reel packaging.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notifications, as availability may be limited. Ensure storage conditions remain within specified temperature ranges to maintain device integrity prior to assembly.
Select this component for designs requiring dual NPN transistors in a minimal space-constrained layout. Verify that the 20 V voltage rating and 0.2 A current limits align with circuit requirements. Consider the 350 MHz transition frequency for high-speed signal handling needs.
This part belongs to ROHM's series of complex bipolar transistors designed for compact electronic systems. The VMT6 package allows for high-density PCB mounting. It serves as a discrete solution for applications previously using larger dual-transistor modules.
The VT6Z1 is listed as a similar specification part number. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure the replacement meets the same package and polarity requirements.