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The VT6X12T2R is a dual NPN complex bipolar transistor manufactured by ROHM Semiconductor, housed in the VMT6 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The device features a DC current gain (hFE) range of 120 to 560 at 1mA and 6V. It operates within a junction temperature range up to 150°C and supports storage temperatures from -55°C to 150°C. The component is supplied in tape and reel packaging with a standard unit quantity of 8000.
Verify the specific ordering suffix and package variant against the official datasheet before procurement. Confirm supply status as components may be subject to discontinuation or last-time buy notices. Ensure compatibility with RoHS directives if required by the target application environment.
Select this component when a dual NPN BJT array is required in a VMT6 package. Verify that the 50V VCEO and 100mA IC ratings exceed the circuit's maximum operating conditions. Consider the hFE spread of 120-560 for biasing stability requirements in the design phase.
This part belongs to ROHM's series of complex bipolar transistors designed for high-density PCB layouts. The VMT6 package provides a small form factor compared to discrete equivalents. It serves as an alternative to single transistors where multiple matching NPN devices are needed in a single package.
Publicly confirmed substitute part numbers for VT6X12T2R were not found in the provided source material. Consult the manufacturer's official replacement guide for verified alternatives.