VT6Z2T2R

Overview

The VT6Z2T2R is a dual NPN bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It is housed in a VMT6 surface-mount package, equivalent to the SOT-563 form factor with six terminals. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. DC current gain (hFE) ranges from 120 to 560 at 1 mA and 6 V. Power dissipation is rated at 150 mW, with a maximum operating junction temperature of +150°C. The transition frequency (fT) is specified at 300 MHz.

Feature Summary

• Dual NPN configuration integrated into a compact surface-mount package for space-constrained designs.
• High current gain range suitable for amplification and switching applications.
• Robust thermal performance supporting operation up to 150°C junction temperature.

Applications

• General-purpose signal amplification circuits
• Switching applications in consumer electronics
• Interface circuits requiring dual complementary-like NPN structures

Procurement Notes

Verify the specific suffix 'T2R' against the official ROHM datasheet to confirm tape-and-reel packaging specifications. Ensure the VMT6 package code matches the target PCB footprint. Cross-reference the hFE binning requirements with circuit design limits before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN topology is required in a small outline package. Compare fT and hFE characteristics against alternative SOT-563 devices if higher speed or tighter gain tolerances are needed. Verify power dissipation constraints under actual thermal conditions.

Part Context

This part belongs to ROHM's complex transistor series, designed to replace discrete dual-transistor solutions. It simplifies board layout by integrating two matched NPN transistors into a single six-terminal package, reducing component count and parasitic effects in high-density assemblies.

Replacement Considerations

The EMX52T2R is documented as a similar specification replacement with identical VMT6 packaging and electrical parameters. Verify pin compatibility and hFE distribution before substitution.

FAQ

What is the package type for the VT6Z2T2R?

It uses the VMT6 package, which corresponds to an SOT-563 form factor with dimensions of 1.2x1.2 mm.

Is the VT6Z2T2R suitable for high-frequency applications?

Yes, it has a transition frequency (fT) of 300 MHz, making it appropriate for moderate-speed switching and amplification tasks.

What is the maximum power dissipation?

The maximum power dissipation is 150 mW at an ambient temperature within specified limits.