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The VUO82-08NO7 is a three-phase rectifier bridge manufactured by IXYS, utilizing planar passivated chip technology. It features screw terminals for panel mounting and provides an isolation voltage of 3000 Vrms. The device supports a maximum repetitive peak reverse voltage (VRRM) of 800 V and a non-repetitive peak surge current (IFSM) of 820 A at 60 Hz. Average forward current ratings are 88 A at a case temperature of 110°C and 57 A at an ambient temperature of 45°C with zero thermal resistance to the heatsink. The component operates within a junction temperature range of -40°C to +150°C.
Verify the specific voltage rating suffix against the datasheet table, as the VUO82 series includes variants from 600 V to 1800 V. Confirm that the ordering code matches the 800 V specification required for the application. Ensure compliance with the specified mounting torque of 5 Nm for M5 screws to maintain proper thermal contact and mechanical stability during operation.
Select this component when a three-phase rectification solution requires high surge current handling and reliable isolation. Compare the thermal resistance values (RthJC) against the system's cooling capacity to ensure the junction temperature remains within limits. Consider the physical dimensions and weight for space-constrained industrial enclosures where screw mounting is preferred over PCB traces.
This part belongs to the VUO82 family of three-phase rectifier bridges, which are designed for general industrial power conversion. The series offers various voltage ratings while maintaining consistent package styles and mounting characteristics. It serves as a standard component for converting AC input to DC output in medium-power applications requiring rugged semiconductor performance.
Direct substitutes include other VUO82 series models with matching or higher voltage ratings, such as VUO82-12NO7 or VUO82-16NO7, provided the electrical parameters exceed the original requirements. Verify that alternative packages maintain the same PWS-D form factor and terminal layout for seamless integration without modifying the host board or chassis.
The maximum allowable acceleration is 50 m/s².
The rating is 88 A at a case temperature of 110°C and decreases to 57 A at an ambient temperature of 45°C with a thermal resistance to the heatsink of 0.6 K/W.
The isolation voltage is 3000 Vrms at 1 mA for 1 second, or 2500 Vrms at 50/60 Hz for 1 minute.