Diode Arrays VX8060PWHM3/P product image

VX8060PWHM3/P

$1.39
  • Description:DIODE ARR SCHOTT 60V 40A TO247AD
  • Series:-

SKU:4edd6ca5b096 Category: Brand:

  
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VX8060PWHM3/P is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 40A TO247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VX8060PWHM3/P

  • Description:DIODE ARR SCHOTT 60V 40A TO247AD
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):40A
  • Voltage - Forward (Vf) (Max) @ If:610 mV @ 40 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr:4.5 mA @ 60 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for VX8060PWHM3/P

VX8060PWHM3/P

Diode Arrays Overview

The Vishay VX8060PWHM3/P is a dual high voltage TMBS rectifier in a TO-247AD 3L package. It features a maximum repetitive peak reverse voltage of 60 V and a total maximum average forward rectified current of 80 A (40 A per diode). The device supports a peak forward surge current of 500 A and operates within a junction temperature range of -40 °C to +150 °C. Electrical characteristics include an instantaneous forward voltage of up to 0.61 V at 40 A and 25 °C, with a typical thermal resistance of 0.6 °C/W.

Diode Arrays Feature Summary

  • Utilizes Trench MOS Schottky technology for ultra-low forward voltage drop and reduced power losses
  • Features common cathode configuration suitable for freewheeling and OR-ing applications
  • Includes HM3 suffix indicating compliance with JESD 201 class 2 whisker test requirements

Diode Arrays Applications

  • High frequency DC/DC converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering code against the manufacturer's documentation to confirm compliance status. The HM3 suffix denotes AEC-Q101 qualification and adherence to stricter whisker testing standards compared to the M3 variant. Ensure that the required quantity matches the standard tube delivery mode specified in the official datasheet.

Diode Arrays Selection Notes

Select this component when designing systems requiring low forward voltage drops at high currents to maximize efficiency. The dual common cathode structure simplifies circuit layout for synchronous rectification or parallel diode configurations. Verify that the operating junction temperature remains within the specified limits under all expected load conditions.

Diode Arrays Part Context

This part belongs to the VX8060PW series of dual high voltage TMBS rectifiers manufactured by Vishay General Semiconductor. The series utilizes trench MOS barrier schottky technology to achieve superior performance over traditional silicon rectifiers. The specific model includes the HM3 suffix, which indicates automotive qualification and enhanced material compliance.

Diode Arrays Replacement Considerations

VX8060PW-M3/P

Diode Arrays FAQ

What is the difference between the M3 and HM3 suffixes?

The HM3 suffix indicates that the device is AEC-Q101 qualified and meets the JESD 201 class 2 whisker test, whereas the M3 suffix meets the JESD 201 class 1 whisker test.

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 60 V.

How is the forward current rated for this dual diode?

The maximum average forward rectified current is 80 A per device, which equates to 40 A per individual diode.

VX8060PWHM3/PVX8060PWHM3/P
$1.39
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