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The GeneSiC Semiconductor W02M is a single-phase silicon bridge rectifier rated for a maximum average forward rectified current of 1.5 A at an ambient temperature of 50 °C. It features a maximum recurrent peak reverse voltage (VRRM) of 200 V and a maximum DC blocking voltage of 200 V. The device exhibits a maximum instantaneous forward voltage of 1.0 V at 1.5 A and a peak forward surge current capability of 40 A under JEDEC testing conditions. Operating junction temperatures range from -55 °C to +125 °C, with storage temperatures extending up to +150 °C.
Verify component authenticity by cross-referencing the manufacturer's marking with official datasheet specifications. Confirm RoHS compliance status and lead plating integrity upon receipt. Ensure storage conditions remain within the specified temperature range to maintain material stability before installation.
Select this component for applications requiring a 200 V reverse voltage rating and 1.5 A continuous current capacity. Derate the forward current by 20% when used with capacitive loads. Consider thermal resistance values when designing heat dissipation strategies for high ambient temperature environments.
This component belongs to the W005M through W10M series of single-phase silicon bridge rectifiers. All members in this family share identical physical dimensions and electrical characteristics regarding current handling, differing only in their maximum repetitive peak reverse voltage ratings which range from 50 V to 1000 V.
Compatible substitutes include other single-phase bridge rectifiers with matching 1.5 A current ratings and 200 V minimum reverse voltage capabilities. Verify that replacement parts support the same DOB package style and meet equivalent thermal resistance requirements for direct PCB integration.