WAB400M12BM3

$874.99

Description：MOSFET 2N-CH 1200V 468A MODULE
Series：-

SKU:3e100bd57dd8 Category: FET, MOSFET Arrays Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 468A MODULE
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：468A (Tc)
Rds On (Max) @ Id, Vgs：4.25mOhm @ 400A, 15V
Vgs(th) (Max) @ Id：3.6V @ 106mA
Gate Charge (Qg) (Max) @ Vgs：1040nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：29700pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Grade：-
Qualification：-

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WAB400M12BM3

Overview

The Wolfspeed WAB400M12BM3 is a 1200 V, 400 A all-Silicon Carbide half-bridge module featuring conduction optimized third-generation SiC MOSFET technology. It operates with a maximum junction temperature of 175 °C and includes THB-80 qualification for high humidity environments. The device utilizes a silicon nitride insulator and copper baseplate within an industry-standard 62 mm footprint. Key electrical parameters include a drain-source voltage (VDS) of 1200 V, a DC continuous drain current (ID) of 468 A at 25 °C case temperature, and a typical on-state resistance (RDS(on)) of 4.25 mΩ at 15 V gate drive. Stray inductance is specified at 10.2 nH.

Feature Summary

Implements conduction optimized third-generation Silicon Carbide MOSFET technology
Features a low inductance design with a stray inductance of 10.2 nH
Includes THB-80 qualification for reliable operation in high humidity conditions
Utilizes a silicon nitride insulator and copper baseplate for thermal management

Applications

Railway & Traction systems
Solar energy inverters
Electric Vehicle (EV) Chargers
Industrial Automation & Testing equipment

Procurement Notes

Verify the specific revision level against the manufacturer's latest documentation to ensure compliance with current specifications. Confirm that the ordering suffix matches the required package and terminal configuration. Cross-reference the datasheet parameters with system requirements before finalizing procurement decisions.

Selection Notes

Select this component when a 62 mm footprint replacement for IGBT modules is required. Ensure the gate driver supports the recommended -4 V to +15 V operating range. Verify that the thermal interface material application meets the mounting torque specifications of 4.5 to 5.5 N-m for M6 bolts.

Part Context

This module belongs to the Wolfspeed DM series of Silicon Carbide power modules. It is designed as a drop-in replacement for legacy 62 mm IGBT packages, facilitating faster time-to-market for designers transitioning from silicon-based technologies to wide-bandgap semiconductors.