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The WAS310M17BM3 is a Silicon Carbide half-bridge power module rated for 1700 V and 310 A. It features an industry-standard 62 mm footprint with a copper baseplate and aluminum nitride insulator. Key electrical parameters include a maximum drain-source voltage of 1700 V, a continuous drain current of 307 A at 90 °C case temperature, and a typical on-state resistance of 5.8 mΩ at 150 °C. The module supports a virtual junction temperature range from -40 °C to 150 °C, with intermittent operation up to 175 °C. Stray inductance is specified at 11.1 nH.
Verify the specific ordering suffix when purchasing. The WAS310M17BM3 designation indicates the module without pre-applied phase change thermal interface material. The variant WAS310M17BM3T includes pre-applied thermal interface material. Confirm the exact part number required for your assembly process to ensure compatibility with your thermal management design.
Select this module for high-power density applications requiring robust 1700 V blocking capability. Ensure the gate drive circuitry supports the recommended static gate-source voltage range of -4 V to +15 V. Verify that the cooling solution maintains the case temperature within limits to sustain the 307 A continuous current rating at 90 °C.
This component belongs to Wolfspeed's BM3 generation of silicon carbide power modules. It utilizes a half-bridge configuration optimized for industrial environments. The device is part of a broader portfolio including compatible evaluation tools like the KIT-CRD-CIL17N-BM and gate driver boards such as the CGD1700HB2P-BM3.
Direct replacements must match the 1700 V / 310 A rating and 62 mm footprint. Compatible alternatives within the same family include the CAS310M17BM3. Verify pinout compatibility and thermal resistance specifications before substituting.
The WAS310M17BM3 does not include pre-applied phase change thermal interface material, whereas the WAS310M17BM3T comes with pre-applied thermal interface material.
The maximum transient gate-source voltage is +23 V. The recommended static operating voltage is +15 V with a tolerance of ±5%.
Silicon Carbide Schottky diodes do not have reverse recovery energy in the traditional sense, but they contribute capacitive energy during switching transitions.