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Product Detailed Parameters
- Description：MOSFET 650V 13A 14PQFN
- Series：WiseGan™
- Mfr：Wise-Integration
- Package：Tray
- Technology：GaNFET (Gallium Nitride)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：650V
- Current - Continuous Drain (Id) @ 25°C：13A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：2.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：2.75nC @ 6V
- Input Capacitance (Ciss) (Max) @ Vds：92.7pF @ 400V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：14-PowerLDFN
- Supplier Device Package：14-PQFN (6x8)
- Grade：-
- Qualification：-
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Overview
The WI62120 is a JEDEC-certified, enhancement-mode Gallium Nitride (GaN) half-bridge power integrated circuit from the WiseGan family. It integrates two symmetrical High Electron Mobility Transistors (HEMTs) with a Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current rating of 13A. The device features a low on-resistance (Rds(on)) of 120mΩ per HEMT, enabling high-frequency switching operations exceeding 1 MHz. Packaged in a compact 14-PQFN (6x8mm) surface-mount footprint, it is designed to deliver enhanced power density and efficiency for modern power electronics applications.
Feature Summary
- Integrates a symmetrical 650V GaN half-bridge with dual HEMTs in a single package
- Supports high-frequency switching operations above 1 MHz due to low on-resistance
- JEDEC-certified enhancement-mode GaN-on-silicon technology for reliability
- Compact 14-PQFN surface-mount design to maximize power density
Applications
- High-frequency DC-DC converters
- Power supplies requiring high power density
- Advanced power electronics systems
Procurement Notes
Verify component authenticity by checking for official Wise-Integration markings and JEDEC certification compliance. Ensure the 14-PQFN (6x8) package matches your PCB layout requirements. Confirm that the 650V voltage rating and 13A current capacity align with your specific circuit design needs before finalizing procurement.
Selection Notes
Select this component when designing circuits that require high switching frequencies above 1 MHz and need to minimize passive component size. The 120mΩ Rds(on) is suitable for applications prioritizing efficiency and thermal performance within a small form factor. Ensure gate drive compatibility with enhancement-mode GaN devices.
Part Context
The WI62120 belongs to the WiseGan family of power ICs from Wise-Integration. It represents a move towards more compact and efficient power solutions using GaN-on-silicon technology. As an enhancement-mode device, it offers improved safety and ease of driving compared to depletion-mode alternatives, fitting into the broader trend of next-generation power management.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Designers should consult manufacturer guidelines for potential cross-references or contact Wise-Integration directly for compatible alternatives.
