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The XN0450400L is a dual NPN bipolar junction transistor array manufactured by Panasonic Industry. It features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 20V. The device operates with a transition frequency of 200MHz and has a maximum power dissipation of 300mW. DC current gain is specified at 200 minimum when Ic is 500mA and Vce is 2V. Saturation voltage is limited to 400mV at Ib of 20mA and Ic of 500mA. Collector cutoff current is 100nA. It utilizes an SOT-23-6 package, also identified as MINI6-G1, and supports a junction temperature up to 150°C.
Verify the specific ordering suffix for packaging requirements, such as tape and reel quantities. Confirm component status as discontinued or not recommended for new design through official Panasonic Industry channels before finalizing procurement plans. Ensure compatibility with existing inventory constraints.
Select this component when a compact dual NPN solution is required for low-voltage, moderate-current applications. Verify that the 20V breakdown voltage and 500mA current limits align with circuit demands. Consider the SOT-23-6 footprint for PCB layout compatibility and ensure thermal management supports the 300mW power dissipation rating.
This part belongs to the XN0450 series of dual NPN transistor arrays from Panasonic Industry. These components are designed for space-constrained designs requiring multiple transistors in a minimal footprint. The series offers standardized electrical characteristics suitable for consumer electronics and industrial control modules.
Check Panasonic's cross-reference tools for equivalent parts. Verify pinout compatibility and electrical parameters against potential substitutes. Ensure any replacement maintains the same package type and thermal characteristics.