XN0A55400L

XN0A55400L

$0.48
  • Description:TRANS 2NPN 40V 100MA MINI6-G1
  • Series:-

SKU:18ed442bbd4f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 40V 100MA MINI6-G1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 1V
  • Power - Max:300mW
  • Frequency - Transition:450MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:MINI6-G1
  • Grade:-
  • Qualification:-

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XN0A55400L

Overview

The XN0A55400L is a dual NPN bipolar junction transistor (BJT) array manufactured by Panasonic Industrial Automation Sales. It operates with a collector-emitter breakdown voltage of 20V and supports a maximum continuous collector current of 500mA. The device features a transition frequency of 200MHz and a maximum power dissipation of 300mW. Packaged in the MINI6-G1 surface-mount format, it functions as a dual common-base configuration component suitable for high-speed switching applications within an operating temperature range up to 150°C.

Feature Summary

  • Dual NPN transistor array integrated into a compact surface-mount package
  • High-frequency operation capability with a 200MHz transition frequency
  • Robust thermal performance supporting junction temperatures up to 150°C

Applications

  • High-speed digital logic circuits requiring dual transistor arrays
  • RF signal processing and amplification stages
  • Switching regulators and power management modules

Procurement Notes

Verify the specific manufacturer designation, as official records list this part under Panasonic Industrial Automation Sales rather than Electronic Components. Confirm the exact package type MINI6-G1 against schematic footprints. Check for end-of-life status or alternative sourcing options due to potential discontinuation.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint. Ensure the circuit design accommodates the 20V voltage limit and 500mA current rating. Verify that the 300mW power dissipation constraint fits the thermal profile of the target application environment.

Part Context

This component belongs to the XN0450 series of dual BJT arrays. It serves as a specialized discrete semiconductor solution for applications needing two matched transistors in a single package, offering space savings compared to individual components while maintaining high-speed electrical characteristics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Panasonic datasheets for direct pin-compatible alternatives or functional equivalents within the same series.

XN0A55400LXN0A55400L
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