XP0NG8A00L

XP0NG8A00L

  • Description:TRANS PREBIAS PNP 50V SMINI6
  • Series:-

SKU:d13cf96c5864 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SMINI6
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased + Diode
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:80 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SMINI6-G1

Download product information

XP0NG8A00L

Overview

The XP0NG8A00L is a silicon PNP epitaxial planar transistor integrated with a switching diode in an SMini6-G1 package. It features two elements: a PNP transistor and a Schottky barrier diode (SWD). The transistor has a collector-emitter voltage of -50 V, collector current of -100 mA, and DC current gain of 20 minimum at -5 mA. Internal bias resistors R1 and R2 are both 4.7 kΩ. The SWD supports 80 V reverse voltage and 100 mA forward current. Total power dissipation is 150 mW.

Feature Summary

  • Integrates a PNP transistor and a Schottky barrier diode into a single compact package to reduce component count and board space.
  • Includes built-in base bias resistors for simplified circuit design and improved switching performance.
  • Utilizes the SMini6-G1 surface-mount package suitable for automated tape and magazine packing processes.

Applications

  • Digital circuits requiring combined logic and protection functions
  • General electronic equipment such as office machines and measuring instruments
  • Household appliances

Procurement Notes

Verify the specific lifecycle status before procurement, as Panasonic classifies this product under maintenance or discontinued categories. Confirm the latest specifications via official channels prior to final design implementation. Ensure compliance with RoHS directives and handle components according to ESD precautions during mounting.

Selection Notes

Select this component when a compact solution combining a PNP switch and a fast recovery diode is required. Verify that the -50 V rating and 100 mA current limits meet the application requirements. Consider the internal 4.7 kΩ bias resistors for driving compatibility. Note that the device is intended for standard applications rather than automotive or life-support systems.

Part Context

The XP0NG8A series belongs to Panasonic's multi-chip discrete lineup designed for digital circuits. It combines a bipolar junction transistor with a Schottky barrier diode to enhance switching speed and reduce parasitic effects. This integration allows for downsizing equipment while maintaining reliable performance in general-purpose electronic applications.

Replacement Considerations

Check Panasonic's official replacement list for equivalent multi-chip discrete packages. Verify pinout compatibility and electrical parameters if substituting with other manufacturers' dual-element SMini packages.

FAQ

What is the function of the internal resistors?

The XP0NG8A includes two internal bias resistors, R1 and R2, each with a nominal value of 4.7 kΩ, connected to the transistor base to facilitate easier driving and switching.

What type of diode is integrated in this package?

The package integrates a Schottky Barrier Diode (SWD) with a maximum reverse voltage of 80 V and a reverse recovery time of 3.0 ns.

Is this component suitable for automotive applications?

No, the datasheet specifies that this product is intended for standard applications like office equipment and household appliances. It is not recommended for automotive or safety-critical systems without special qualification.

XP0NG8A00LXP0NG8A00L

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