XP2306GN

$0.31

Description：MOSFET N-CH 20V 5.3A SOT23
Series：XP2306
Mfr：YAGEO XSEMI
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:438c5693a48a Category: Single FETs, MOSFETs Brand: YAGEO XSEMI

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Product introduction

XP2306GN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists YAGEO XSEMI. Its product description is MOSFET N-CH 20V 5.3A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for XP2306GN

Description：MOSFET N-CH 20V 5.3A SOT23
Series：XP2306
Mfr：YAGEO XSEMI
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：603 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.38W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for XP2306GN

XP2306GN

Single FETs, MOSFETs Overview

The XP2306GN is a single N-channel enhancement mode MOSFET manufactured by YAGEO XSemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 20 V, a continuous drain current (Id) of 5.3 A at ambient temperature, and a maximum power dissipation (Pd) of 1.38 W. The device features a gate-source voltage range of -8 V to 8 V, a typical threshold voltage (Vgs th) of 1 V, and a gate charge (Qg) of 8.7 nC. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Single N-channel configuration for low-side switching applications
Enhancement mode operation with standard logic-level gate drive compatibility
Silicon-based construction optimized for general-purpose power switching

Single FETs, MOSFETs Applications

Low-voltage DC-DC converter circuits
Load switching in portable electronic devices
Battery protection and management systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for lifecycle changes as the part may be obsolete; consult current datasheets for availability and recommended replacement strategies before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 20 V rated N-channel switch with moderate current handling capabilities. Ensure the thermal design supports the 1.38 W power dissipation limit. Verify that the gate drive voltage aligns with the specified -8 V to 8 V range for optimal performance and reliability.

Single FETs, MOSFETs Part Context

This component belongs to the XP series of power MOSFETs from YAGEO XSemi, designed for surface-mount integration. It serves as a discrete switching element in power electronics, distinct from integrated driver ICs or multi-channel configurations found in other product lines.