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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 8.7A PMPAK
- Series：XP3700
- Mfr：YAGEO XSEMI
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8.7A (Ta), 6.1A (Tc)
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：880pF @ 15V
- Power - Max：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerDFN
- Supplier Device Package：PMPAK® 3 x 3
- Grade：-
- Qualification：-
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Overview
The XP3700YT is a complementary dual MOSFET from the YAGEO XSemi XP series, integrating N-channel and P-channel enhancement-mode transistors in a single PMPAK-8 surface-mount package. It features a drain-source breakdown voltage of 30 V for the N-channel and -30 V for the P-channel. The device supports continuous drain currents of 7.3 A and 11 A respectively, with on-resistances of 18 mOhms and 45 mOhms. Gate-source voltage limits are ±20 V, and it operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Integrates complementary N-channel and P-channel enhancement-mode MOSFETs into a single compact component
- Provides low on-resistance characteristics for efficient power switching applications
- Supports high continuous current handling capabilities suitable for load management
- Designed for surface-mount installation to facilitate automated assembly processes
Applications
- DC-DC converter output stages
- Motor driver bridge circuits
- Load switch implementations
- Power management unit integration
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical tolerances and thermal characteristics. Ensure that the requested part matches the required channel configuration and package type for your circuit design. Cross-reference the datasheet parameters with your system's voltage and current requirements before finalizing procurement decisions.
Selection Notes
Select this component when a space-saving solution requiring both high-side and low-side switching is necessary. The complementary nature eliminates the need for separate discrete components, reducing board area. Consider the specific on-resistance values for each channel to ensure adequate efficiency for your intended load current and thermal environment constraints.
Part Context
This device belongs to the XP series of power MOSFETs manufactured by YAGEO XSemi. The series utilizes silicon technology to deliver robust performance in various power electronics applications. The PMPAK-8 package provides a balance between thermal dissipation and footprint size, making it suitable for dense PCB layouts.
Replacement Considerations
Consult official substitution lists for direct replacements. Verify pin compatibility and electrical parameter equivalence if considering alternative manufacturers or different package variants within the same series.
